Vertical Semiconductor Secures $11M for AI Power Innovation

Vertical Semiconductor raises $11M to develop vertical GaN transistors, enhancing AI data center efficiency and scalability.

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Vertical Semiconductor Secures $11M for AI Power Innovation

Vertical Semiconductor Secures $11 Million for AI Power Innovation

In a significant development within the semiconductor industry, Vertical Semiconductor, a startup spun out of the Massachusetts Institute of Technology (MIT), has successfully raised $11 million in seed funding. This investment, led by Playground Global, aims to accelerate the development of vertical gallium nitride (GaN) transistors, which are designed to revolutionize power delivery in AI data centers by reducing heat and energy costs.

The funding round also includes investments from JIMCO Technology Ventures, milemark•capital, and Shin-Etsu Chemical. This financial backing underscores the growing interest in innovative power solutions for AI infrastructure, as data centers increasingly face challenges related to power consumption and efficiency.

Background

Vertical Semiconductor's technology is centered on addressing a critical bottleneck in AI hardware: the efficient delivery of power to silicon chips. Traditional power conversion methods often result in significant energy loss as heat, which not only increases operational costs but also limits the scalability of AI systems. By leveraging vertical GaN transistors, Vertical Semiconductor aims to bring power conversion closer to the chip, thereby reducing energy loss and heat generation.

"We're enabling the next wave of innovation by rewriting how electricity is delivered in data centers at scale," said Cynthia Liao, CEO and co-founder of Vertical Semiconductor. This approach promises to improve efficiency by up to 30% and enable a 50% smaller power footprint in AI data center racks, which is crucial for supporting the rapid growth of AI workloads without exacerbating energy consumption issues.

Key Features of Vertical Semiconductor's Technology

Vertical GaN Transistors

  • Efficiency and Heat Reduction: Vertical GaN transistors are engineered to reduce power loss and heat generation, which are major challenges in current AI data centers. This technology minimizes the distance between power conversion and the chip, ensuring that more energy is used for computation rather than being wasted as heat.
  • Scalability and Compactness: By reducing the power footprint, Vertical Semiconductor's chips can support higher densities of computing resources in data centers, making them more scalable and efficient.

Industry Collaboration

Vertical Semiconductor is part of a broader industry effort to adopt gallium nitride (GaN) for power management in AI data centers. Established chipmakers like NVIDIA, Renesas, Infineon, and Power Integrations are also exploring GaN-based solutions. However, Vertical Semiconductor's unique approach focuses on the vertical structure of GaN transistors, which could offer advantages in terms of size and thermal management.

Industry Impact

The $11 million funding round not only highlights the potential of Vertical Semiconductor's technology but also underscores the industry's urgent need for more efficient power solutions. As AI continues to drive innovation across various sectors, the demand for data centers capable of handling complex computations efficiently is growing exponentially. Vertical Semiconductor's technology could play a pivotal role in this landscape by:

  • Enhancing Efficiency: By reducing energy loss and heat, Vertical Semiconductor's chips can help data centers operate more sustainably and cost-effectively.
  • Supporting AI Growth: Efficient power delivery is crucial for the development of more powerful AI systems. By addressing this bottleneck, Vertical Semiconductor is poised to support the next generation of AI applications.

Context and Implications

The rise of AI has led to a surge in data center power consumption, with many facilities now consuming as much electricity as small cities. This shift has sparked a race to develop technologies that can efficiently manage power in these environments. Vertical Semiconductor's focus on vertical GaN transistors represents a promising approach to this challenge.

The collaboration between Vertical Semiconductor and investors like Playground Global reflects a broader trend in the tech industry, where venture capital firms are increasingly backing startups that address foundational challenges in next-generation computing and energy efficiency.

As Vertical Semiconductor moves forward with plans to deliver prototypes this year and commercial chips next year, the company is well-positioned to make a significant impact on the future of AI data centers. By transforming how power is delivered and managed, Vertical Semiconductor could help pave the way for more sustainable and scalable AI infrastructure.

Conclusion

Vertical Semiconductor's $11 million funding round marks a significant milestone in the development of more efficient power solutions for AI data centers. With its innovative approach to vertical GaN transistors, the company is poised to address critical bottlenecks in AI hardware, enabling more sustainable and scalable computing infrastructure. As the demand for AI continues to grow, technologies like those developed by Vertical Semiconductor will play a crucial role in shaping the future of data centers and computing.

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Vertical SemiconductorAI power solutionsGaN transistorsdata centersenergy efficiency
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Published on October 15, 2025 at 12:04 PM UTC • Last updated 3 weeks ago

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